A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C)
A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C)
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多孔层：高温（~650 °C）下生长的 MOVPE InN 劣化的证据
DOI：
10.1002/pssc.200880941
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
A. Yamamoto
中科院分区：
文献类型：
--
作者：
K. Sugita;A. Hashimoto;A. Yamamoto
本文指出了MOVPE InN在高温（~ 650 °C）生长过程中劣化的证据。在生长过程中，InN薄膜在界面附近发生了劣化，并形成多孔层。多孔层具有高电子密度。N面InN分解的速率限制过程取决于原子氢。NH_3分解产生的氢原子是InN薄膜劣化的主要原因。InN的晶体质量随着多孔层的减少而提高，这对于MOVPE InN是重要的。（© 2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∼650 °C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)