Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
复制标题
井尺寸波动对 AlAs-GaAs 超晶格光致发光光谱的影响
DOI：
10.1143/jjap.22.1489
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发表时间：
1983
期刊：
影响因子：
--
通讯作者：
H. Okamoto
中科院分区：
文献类型：
--
作者：
L. Goldstein;Y. Horikoshi;S. Tarucha;H. Okamoto
未掺杂的超晶格的光致发光光谱表现出较小的半宽度相比，在GaAs体晶体。然而，光谱宽度和形状被发现是非常敏感的井的大小。当阱尺寸大于80 μ m时，谱线宽度随阱尺寸的减小而减小，这与理论结果一致;当阱尺寸小于80 μ m时，谱线宽度随阱尺寸的减小而增大。在某些情况下，在主发射峰的较低能量侧出现额外的发射带。这些现象被解释为井的大小波动。
Photoluminescence spectra for undoped superlattices exhibited smaller half widths compared with those obtained in GaAs bulk crystals. However, both the spectral width and shape were found to be very sensitive to the well size. When the well size is greater than about 80 Å, the spectrum at 77 K showed smaller linewidth, which agrees with theoretical results, whereas when the well size is smaller than this, the spectral width increased with decreasing well size. In some cases, additional emission bands appeared in the lower energy side of the main emission peak. These phenomena were interpreted in terms of well size fluctuations.