Magnetism and topological Hall effect in antiferromagnetic Ru2MnSn-based Heusler compounds
Magnetism and topological Hall effect in antiferromagnetic Ru2MnSn-based Heusler compounds
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DOI:
10.1016/j.jmmm.2021.168104
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发表时间:
2021-06-03
影响因子:
2.7
通讯作者:
Sellmyer, David J.
中科院分区:
文献类型:
--
作者:
Zhang, Wenyong;Balasubramanian, Balamurugan;Sellmyer, David J.
Heusler compounds and alloys based on them are of great recent interest because they exhibit a wide variety of spin structures, magnetic properties, and electron-transport phenomena. Their properties are tunable by alloying and we have investigated L2(1)-orderd compound Ru2MnSn and its alloys by varying the atomic Mn:Sn composition. While antiferromagnetic ordering with a Neel temperature of 361 K was observed in Ru2MnSn, the Mnpoor Ru2Mn0.8Sn1.2 alloy exhibits properties of a diluted antiferromagnet in which there are localized regions of uncompensated Mn spins. Furthermore, a noncoplanar spin structure, evident from a topological Hall-effect contribution to the room-temperature Hall resistivity, is realized in Ru2Mn0.8Sn1.2. Our combined experimental and theoretical analysis shows that in the Ru2Mn0.8Sn1.2 alloy, the magnetic properties can be explained in terms of a noncoplanar antiferromagnetic scissor mode, which creates a small net magnetization in a magnetic field and subsequently yields a Berry curvature with a strong topological Hall effect.