Fabricating high-density magnetic storage elements by low-dose ion beam irradiation
Fabricating high-density magnetic storage elements by low-dose ion beam irradiation
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DOI：
10.1063/1.4752447
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发表时间：
2012-09
影响因子：
4
通讯作者：
R. Neb;T. Sebastian;P. Pirro;B. Hillebrands;S. Pofahl;R. Schäfer;B. Reuscher
中科院分区：
文献类型：
--
作者：
R. Neb;T. Sebastian;P. Pirro;B. Hillebrands;S. Pofahl;R. Schäfer;B. Reuscher
我们通过低剂量离子束照射反铁磁耦合的铁磁/非磁/铁磁三层来制造磁性存储元件。被照射的区域变得铁磁耦合，并且如果它们的尺寸足够小就能够存储信息。我们采用 Fe/Cr/Fe 三层和 30 keV 聚焦 Ga+ 离子束来演示位密度为 7 Gbit/in.2 的存储阵列的工作原理。微磁模拟表明，位密度至少大两个数量级是可能的。
We fabricate magnetic storage elements by irradiating an antiferromagnetically coupled ferromagnetic/nonmagnetic/ferromagnetic trilayer by a low-dose ion beam. The irradiated areas become ferromagnetically coupled and are capable of storing information if their size is small enough. We employ Fe/Cr/Fe trilayers and a 30 keV focused Ga+-ion beam to demonstrate the working principle for a storage array with a bit density of 7 Gbit/in.2. Micromagnetic simulations suggest that bit densities of at least two magnitudes of order larger should be possible.