Light-Emitting Field-Effect Transistors Having Combined Organic Semiconductor and Metal Oxide Layers
Light-Emitting Field-Effect Transistors Having Combined Organic Semiconductor and Metal Oxide Layers
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DOI：
10.1002/adma.201300456
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发表时间：
2013-05-28
影响因子：
29.4
通讯作者：
Hotta, Shu
中科院分区：
文献类型：
--
作者：
Yamada, Keisei;Yamao, Takeshi;Hotta, Shu
提出了一种在有机层和栅极绝缘体之间插入金属氧化层的新型有机发光场效应晶体管。金属氧化物通过有机层与源极和漏极间接连接。当源极和漏极之间的电位差增大时，发射变得非常强，并且发射区域包含整个沟道区域。
A new organic light-emitting field-effect transistor characterized by a metal oxide layer inserted between the organic layer and the gate insulator is proposed. The metal oxide is indirectly connected with source and drain electrodes through the organic layer. Upon increasing the potential difference between the source and drain electrodes, the emission becomes exceedingly strong and the emission region encompasses the whole channel zone.