The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film

The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film
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DOI:
10.1016/j.mssp.2013.08.010
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发表时间:
2014-01-01
影响因子:
4.1
通讯作者:
Zhu, J.
Zhu, J.
中科院分区:
工程技术3区
文献类型:
--
作者:
Wang, C. Y.;Ma, S. Y.;Zhu, J.

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采用射频反应磁控溅射法制备了Mg-Al共掺杂ZnO薄膜。X射线衍射分析表明,不同Mg:Al比的薄膜均为六方纤锌矿结构。所有薄膜均显示出ZnO的(100)择优取向。当Al浓度不变而Mg浓度增加时,晶粒尺寸先减小后增大。当Mg:Al比为3:1时,晶粒尺寸最大。紫外-可见光谱表明,该薄膜在可见光范围内具有80%的平均透过率。薄膜的光学带隙如下获得:3.31、3.32和3.37 eV,分别对应于Mg:Al比为0:1、1:1和3:1。光致发光光谱显示所有薄膜都有位于386、410、463和499 nm的四个主峰。蓝峰的来源是氧空位。当Mg浓度不变而Al浓度增加时,I-V曲线表明,两种异质结都形成了整流特性。Mg:Al =1:1薄膜的电导率高于Mg:Al=1:0薄膜的电导率。光照后,光的I-V曲线偏离整流特性。(C)2013爱思唯尔有限公司保留所有权利。
Mg-Al co-doped ZnO thin films were prepared via radio-frequency reactive magnetron sputtering technique. X-ray diffraction investigation showed all the thin films with different Mg:Al ratio had hexagonal wurtzite structure. All the thin films showed (100) preferential orientation of ZnO. When Al concentration was kept constant but Mg concentration was increased, the grain size decreased at first and then increased. When Mg:Al ratio was 3:1, the grain size reached a maximum. Ultraviolet-visible spectra showed the thin films had a high average transmittance of 80% in the visible range. The optical band gaps of the thin films were obtained as follows: 3.31, 3.32, and 3.37 eV, corresponding to the Mg:Al ratio of 0:1, 1:1, and 3:1, respectively. Photoluminescence spectroscopy showed all the thin films had four main peaks located at 386, 410, 463, and 499 nm. The origin of blue peak is oxygen vacancy. When Mg concentration was kept constant but Al concentration was increased, I-V curve presented that for both of the heterojunctions the rectifying behavior was formed. The conductivity of Mg:Al =1:1 thin film is higher than that of Mg:Al=1:0 thin film. After illumination, light I-V curve deviated from rectifying character. (C) 2013 Elsevier Ltd. All rights reserved.