Direct imprinting of high resolution TiO2 nanostructures

Direct imprinting of high resolution TiO2 nanostructures
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DOI:
10.1088/0957-4484/21/28/285303
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发表时间:
2010-07-16
期刊:
影响因子:
3.5
通讯作者:
Low, Hong Yee
Low, Hong Yee
中科院分区:
材料科学3区
文献类型:
--
作者:
Lim, Su Hui;Saifullah, M. S. M.;Low, Hong Yee

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我们展示了一种不同的方法来直接对氧化物,特别是二氧化钛进行纳米压印光刻,使用金属甲基丙烯酸酯路线,不仅提供了非常高的分辨率(类似于20 nm),而且在>1厘米x 1厘米的面积上提供了类似于100%的产率。使用由甲基丙烯酸钛、乙二醇二甲基丙烯酸酯和偶氮二异丁腈的混合物组成的可聚合液体‘二氧化钛树脂’对二氧化钛进行印迹。当使用110摄氏度的硅模在低至10bar的压力下进行印记时,该树脂经历了自由基聚合。聚合增强了印迹结构,从而在脱模后获得了类似于100%的产率。印迹结构在400℃下的热处理导致有机物的损失和随后的收缩(类似于75%)而不损失完整性或纵横比,并将其转化为小至20 nm宽的二氧化钛纳米结构。此外,我们的方法表明,通过亚微米模具可以实现大的压印面积的亚100纳米特征,这转化为巨大的成本节约,并增加了一元和多组分氧化物的直接图案化的灵活性。
We demonstrate a different approach to direct nanoimprint lithography of oxides, in particular TiO2, using the metal methacrylate route which not only gives very high resolution (similar to 20 nm) but also provides yields of similar to 100% over areas > 1 cm x 1 cm. TiO2 was imprinted using a polymerizable liquid 'TiO2 resin' consisting of a mixture of titanium methacrylate, ethylene glycol dimethacrylate, and azobis-(isobutyronitrile). The resin underwent free radical polymerization when imprinted using a silicon mold at 110 degrees C with pressures as low as 10 bar. Polymerization strengthens the imprinted structures, thereby giving similar to 100% yield after demolding. Heat-treatment of the imprinted structures at 400 degrees C resulted in the loss of organics and their subsequent shrinkage (similar to 75%) without the loss of integrity or aspect ratio, and converted them to TiO2 nanostructures as small as similar to 20 nm wide. Furthermore, our method demonstrates that large imprinted areas of sub-100-nm features can be achieved by sub-micron molds which translate into huge cost savings with the added flexibility of direct patterning of unary as well as multi-component oxides.