Tuning of silicene-substrate interactions with potassium adsorption
Tuning of silicene-substrate interactions with potassium adsorption
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DOI：
10.1063/1.4808214
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发表时间：
2013-06-03
影响因子：
4
通讯作者：
Yamada-Takamura, Y.
中科院分区：
文献类型：
--
作者：
Friedlein, R.;Fleurence, A.;Yamada-Takamura, Y.
通过角分辨光电子能谱和低能电子衍射研究了暴露于 K 原子的 ZrB2(0001) 薄膜上外延硅烯的电子结构演变和结构稳定性。钾吸附导致电荷向硅烯晶格捐赠，同时伴随着先前未占据的 pi* 能带的部分填充以及二硼化物表面态与向后折叠 pi 能带的下分支之间的杂化增加。结果可以识别硅烯衍生的 pi 电子态，并证实在 K 吸附之前，硅烯-基底界面处的相互作用相当弱。 (C) 2013 AIP 出版有限责任公司。
The evolution of the electronic structure and the structural stability of epitaxial silicene on ZrB2(0001) thin films exposed to K atoms has been studied by angle-resolved photoelectron spectroscopy and low-energy electron diffraction. Potassium adsorption leads to charge donation to the silicene lattice, which is accompanied by the partial filling of a formerly unoccupied pi* band and by the increasing hybridization between the diboride surface state and the lower branch of the back-folded pi band. The results allow an identification of silicene-derived pi electronic states and confirm that before K adsorption, the interactions at the silicene-substrate interface are rather weak. (C) 2013 AIP Publishing LLC.