A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V
A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V
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驱动电压为 2.3V 的 40gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder 调制器
DOI：
10.1109/lpt.2004.836900
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发表时间：
2005
影响因子：
2.6
通讯作者：
Y. Tohmori
中科院分区：
文献类型：
--
作者：
K. Tsuzuki;T. Ishibashi;T. Ito;S. Oku;Y. Shibata;R. Iga;Y. Kondo;Y. Tohmori
我们研制了一种在InP衬底上制作的n-i-n异质结行波马赫-曾德尔调制器。我们获得了2.2 V的极小/spl pi/电压（V/spl pi/），即使对于3 mm的短信号电极长度也是如此。我们确认该器件具有阻抗匹配电极，并且在2.3 V的单端驱动电压下以40 Gb/s工作。
We have developed a traveling-wave Mach-Zehnder modulator using an n-i-n heterostructure fabricated on an InP substrate. We obtained an extremely small /spl pi/ voltage (V/spl pi/) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed that the device has an impedance-matched electrode and operates at 40 Gb/s with a single-ended drive voltage of 2.3 V.