The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects
The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects
复制标题
总电离剂量辐照对 CMOS 技术的影响以及使用设计技术来减轻总剂量效应
DOI：
10.1109/relphy.2002.996663
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
R. Lacoe
中科院分区：
文献类型：
--
作者：
R. Lacoe
仅提供摘要形式。总电离剂量辐射，如伽马射线和X射线，以及高能电子和质子对CMOS性能的影响，在单个器件级和电路级，进行了描述。各种CMOS工艺的固有总剂量硬度的数据，这表明总剂量硬度的增加，CMOS技术的规模。还描述了设计技术及其在减轻总剂量效应方面的功效。
Summary form only given. The effects of total ionizing dose irradiation such as gamma- and X-rays as well as energetic electrons and protons on CMOS performance, at the single device level and at the circuit level, are described. Data are presented on the intrinsic total dose hardness of various CMOS processes, which indicates an increase in total dose hardness as CMOS technology is scaled. Design techniques and their efficacy in mitigating against total dose effects are also described.