Characterization of Silicon-Film/spl trade/ sheet material
Characterization of Silicon-Film/spl trade/ sheet material
复制标题
硅薄膜/spl 贸易/片材的表征
DOI：
10.1109/pvsc.2002.1190465
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
R. Reedy
中科院分区：
文献类型：
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作者：
J. Rand;G. Rozgonyi;Jinggang Lu;R. Reedy
硅膜/spl贸易/工艺生产用于生产太阳能电池的多晶硅片。该工艺采用低成本材料和高通量设备进行大批量生产。本文报道了表征这种相对较新的材料的进展。小晶粒尺寸和杂质的存在是小晶粒多晶硅性能损失的合理解释。随着对关键高温过程（如捕集）的理解的进步，对杂质要求的看法也发生了变化。由于多晶硅片材料可以承受比以往在CZ生长材料中发现的更高的杂质水平，了解允许的杂质浓度将导致更低成本的硅，从而导致更低成本的太阳能电池。同样，传统的晶粒尺寸限制被证明是不准确的，允许比想象的更小的晶粒更高的性能。为了深入研究这些和其他具体的物质问题，一个产学研政府团队已经成立。本文报告了该团队发现的一些结果，并强调了一些关于杂质和获取的结论。
The Silicon-Film/spl trade/ process produces a polycrystalline silicon sheet used in the production of solar cells. The process uses low-cost materials and high-throughput equipment for high volume production. This paper reports on the progress in characterizing this relatively new material. Small grain sizes and the presence of impurities are the logical explanation for performance losses in small grain polycrystalline silicon. With advances in the understanding of critical high temperature processes, such has gettering, views on impurity requirements have changed. As polycrystalline silicon sheet material can tolerate higher impurity levels then historically found in CZ grown materials, understanding the allowed impurity concentrations will lead to lower-cost silicon, which in turn will lead to lower-cost solar cells. Similarly, conventional grain size limits are shown to be inaccurate, allowing higher performance than thought possible from smaller grains. To delve into these and other specific material issues, an industry - academic - government team has been established. This paper reports on some of the results found by that team and highlights some of the conclusions that have been drawn as regards impurities and gettering.