Why Is FE-HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
Why Is FE-HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
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DOI：
10.1109/led.2016.2593627
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发表时间：
2016-09-01
影响因子：
4.9
通讯作者：
Ma, Tso-Ping
中科院分区：
文献类型：
--
作者：
Gong, Nanbo;Ma, Tso-Ping
基于铁电门控场效应晶体管（FeFET）的单晶体管存储电池的有限保留时间阻碍了其非易失性存储（NVM）选项的商业化，该选项使用市上可用的铁电材料，如锶铋钽酸盐（SBT）或钛酸锆铅（PZT）作为栅极介质。然而，最近基于hfo2的铁电体的出现已经证明了在大规模缩放的fet上满足NVM要求保持10年的强大可能性。本文将基于两种主要的保留损失机制：去极化场和电荷捕获，分析为什么基于hfo2的铁电（FE-HfO2）的保留比PZT或SBT的保留长得多。
The limited retention time for single-transistor memory cell based on ferroelectric-gated field-effect-transistor (FeFET) has prevented the commercialization of its nonvolatile memory (NVM) option using the commercially available ferroelectric materials, such as strontium bismuth tantalite (SBT) or lead zirconium titanate (PZT), as the gate dielectric. However, the recent advent of the HfO2-based ferroelectric has demonstrated the strong possibility of meeting the NVM requirement of 10-year retention on aggressively scaled FeFETs. This letter will analyze why the retention for HfO2-based ferroelectric (FE-HfO2) is much longer than its PZT or SBT counterparts, based on the two major retention loss mechanisms: depolarization field and charge trapping.