Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition method
Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition method
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DOI：
10.1063/1.2756085
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发表时间：
2007-07-15
影响因子：
3.2
通讯作者：
Suzuki, Hisao
中科院分区：
文献类型：
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作者：
Bartic, Marilena;Ogita, Masami;Suzuki, Hisao
在这篇文章中，我们报道了一种基于化学溶液沉积法制备的氧化镓薄膜的氧传感器的制作。在高温（1000 ℃）下研究了器件的氧传感特性（响应和恢复时间、灵敏度、稳定性）。研究了退火条件对Ga2O3薄膜氧敏传感器性能的影响。薄膜样品的表面形貌，通过使用原子力显微镜测量研究，表明有晶粒大小的差异，由于各种退火条件（温度和时间）。结果表明，退火条件不仅影响Ga2O3薄膜的晶粒尺寸和表面结构，而且影响材料的氧敏性能。结果表明，随着退火温度和退火时间的增加，Ga2 O3传感器的响应时间缩短。当退火参数改变时，传感器器件的灵敏度也会受到影响。在1000 ℃下退火14 h的Ga2O3薄膜传感器在1000 ℃下的响应时间为12 s。
In this article, we report the fabrication of an oxygen sensor based on gallium oxide thin films prepared by the chemical solution deposition method. The oxygen sensing properties of the device (response and recovery time, sensitivity, stability) were investigated at high temperature (1000 degrees C). Attention was paid to the influence of the annealing conditions on the oxygen sensing properties of the Ga2O3 thin film sensor. Surface morphology of thin film samples, studied by using atomic force microscopy measurements, shows that there are grain size differences due to various annealing conditions (temperature and time period). The results show that the annealing conditions affect not only the grain size and surface structure of Ga2O3 thin films but also the oxygen sensing properties of the material. It was shown that the response time of the Ga2O3 sensors decreased when the annealing temperature and annealing time were increased. The sensitivity of the sensor devices it is also affected when the annealing parameters are changed. The response time at 1000 degrees C was 12 s for the Ga2O3 film sensor annealed at 1000 degrees C for 14 h.