Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy
Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy
复制标题
等温深能级瞬态光谱研究n型GaAs亚稳态氢相关缺陷的性质
DOI：
10.1063/1.1305929
复制
发表时间：
2000
影响因子：
3.2
通讯作者：
T. Okumura
中科院分区：
文献类型：
--
作者：
Y. Tokuda;K. Kamiya;T. Okumura
用等温深能级瞬态谱方法详细研究了n-GaAs中与氢有关的亚稳缺陷（M3/M4）。为了阐明电子发射过程的电场依赖性，将双相关技术应用于M3和M4缺陷。结果清楚地表明，随着电场的增加，在140 K附近观察到的M4能级分裂成两个离散的分量，标记为M4（1）和M4（2）。结果支持了最近的发现，M4缺陷由两种不同的配置。另一方面，M3缺陷在230 K附近的双相关谱中给出单峰。发射速率的电场依赖性表明M3和M4（1）缺陷具有施主性质，而M4（2）缺陷具有受主性质。据推测，与M3能级耦合的亚稳态缺陷仅是M4缺陷的两个分量中的M4（2）。
Metastable hydrogen-related defects (M3/M4) in n-GaAs were studied in detail by using isothermal deep-level transient spectroscopy. In order to clarify the electric-field dependence of the electron-emission process, the double-correlation technique was applied to both M3 and M4 defects. It was clearly shown that with increasing electric field, the M4 level observed around 140 K split into two discrete components labeled M4(1) and M4(2). The result supports the recent finding that the M4 defect consists of two different configurations. On the other hand, the M3 defect gave a single peak in the double-correlation spectra around 230 K. The electric field dependence of the emission rates suggests that the M3 and M4(1) defects have a donor-like nature, while the M4(2) defect is acceptor-like. It was speculated that the metastable defect coupling with the M3 level is only M4(2) out of two components of the M4 defect.