Terahertz photo-Hall measurements of carrier mobility in GaAs and InP
Terahertz photo-Hall measurements of carrier mobility in GaAs and InP
复制标题
GaAs 和 InP 中载流子迁移率的太赫兹光霍尔测量
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
T. Khumalo
中科院分区：
文献类型：
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作者：
J. Heyman;D. Bell;T. Khumalo
我们开发了一种灵敏的超快技术来测量半导体中光载流子的迁移率。高电阻率样品用飞秒激光光激发，载流子迁移率由磁场中偏振敏感的太赫兹发射测量确定。在T=280K条件下对半绝缘GaAs样品进行测量，在λ=800nm激发0.5ps内，μe=4400±600cm2∕Vs, μh=850±400cm2∕Vs。在砷化镓中，这种零背景技术需要~ 10pJ∕脉冲光激发，并且可以很容易地用非放大的Ti:S激光振荡器实现。
We have developed a sensitive ultrafast technique for measuring the mobility of photocarriers in semiconductors. High-resistivity samples are photoexcited with a femtosecond laser, and carrier mobilities are determined by polarization-sensitive terahertz emission measurements in a magnetic field. Measurements on a semi-insulating GaAs sample at T=280K yielded μe=4400±600cm2∕Vs and μh=850±400cm2∕Vs within 0.5ps of excitation with λ=800nm radiation. In GaAs, this zero-background technique requires ∼10pJ∕pulse photoexcitation and can be easily implemented with an unamplified Ti:S laser oscillator.