High-resolution x-ray diffraction from multilayered self-assembled Ge dots
High-resolution x-ray diffraction from multilayered self-assembled Ge dots
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DOI：
10.1103/physrevb.55.15652
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发表时间：
1997-06-15
影响因子：
3.7
通讯作者：
Abstreiter, G
中科院分区：
文献类型：
--
作者：
Darhuber, AA;Schittenhelm, P;Abstreiter, G
我们已经研究了多层自组装富锗点嵌入在硅分子束外延生长，使用高分辨率的x射线倒易空间映射和反射率。点阵列之间的Si间隔物厚度在10-40 nm的范围内，典型的点尺寸为直径约150 nm和高度约7 nm。用统计运动学X射线衍射理论模拟了测量的倒易空间图，实验和模拟数据之间取得了很好的一致性。根据测量，确定点阵中的面内应变。我们推导出点位置的垂直相关度（“堆叠”）和点在具有平行于方向的主轴的正方形阵列中的横向排序< 100 >，阵列晶格常数约为500 nm。
We have studied multilayers of self-assembled Ge-rich dots embedded in silicon grown by molecular-beam epitaxy using high resolution x-ray reciprocal space mapping and reflectivity. The Si spacer thicknesses between the dot arrays were in the range of 10-40 nm, the typical dot size was about 150 nm for the diameter and 7 nm for the height. The measured reciprocal space maps were simulated using statistical kinematical x-ray-diffraction theory, and a good agreement between experimental and simulated data has been achieved. From the measurements, the in-plane strain in the dot lattice was determined. We derived the degree of the vertical correlation of the dot positions (''stacking'') and a lateral ordering of the dots in a square array with main axes parallel to the < 100 > directions, with an array lattice constant of about 500 nm.