Ferroelectric switching in epitaxial GeTe films
Ferroelectric switching in epitaxial GeTe films
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DOI：
10.1063/1.4881735
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发表时间：
2014-06-01
期刊：
影响因子：
6.1
通讯作者：
Gruverman, A.
中科院分区：
文献类型：
--
作者：
Kolobov, A. V.;Kim, D. J.;Gruverman, A.
本文采用共振增强压电力显微镜方法，结合密度泛函理论的计算机模拟，研究了外延GeTe薄膜中的铁电开关。结果表明，在厚度为几纳米量级的薄膜中，由于材料内部Ge-Te键的短和长的交换，发生了可逆的极化重取向。这也暗示，对于只由几个与衬底弱结合的原子层组成的超薄膜，铁电开关可能通过各个Gete层内Ge和Te面的交换进行。(C)2014年作者(S)。除另有说明外，所有文章内容均按照知识共享署名3.0未移植许可进行许可。
In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.