Electric-Field-Induced Multistep Resistance Switching in Planar VO2/c-Al2O3 Structure
Electric-Field-Induced Multistep Resistance Switching in Planar VO2/c-Al2O3 Structure
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DOI：
10.1143/jjap.48.065003
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发表时间：
2009-06
影响因子：
1.5
通讯作者：
K. Okimura;N. Ezreena;Yusuke Sasakawa;J. Sakai
中科院分区：
文献类型：
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作者：
K. Okimura;N. Ezreena;Yusuke Sasakawa;J. Sakai
在具有两个端电极的平面器件中研究了 c-Al2O3(001) 衬底上生长的二氧化钒 (VO2) 薄膜的电场诱导电阻切换。我们在尺寸为 5/1500 µm（电极间隙/电极长度）的器件中演示了多步电阻切换，而在尺寸为 10/10 µm 的器件中仅观察到单步电阻切换。多步电阻切换中的每一步都发生在 100 ns 内，并呈现出与时间无关的恒定值。对 VO2 层中丝状电流路径的光学显微镜观察表明，初始丝状电流路径的形成及其发展负责多步电阻切换。温控X射线衍射（XRD）测量表明具有多种转变温度的区域共存，这被认为与多步电阻切换的出现密切相关。 VO2基平面器件中的多步电阻切换不仅在功能电子器件应用中具有广阔的前景，而且也可作为氧化物材料切换机制的基础研究。
The electric-field-induced resistance switching of vanadium dioxide (VO2) films grown on c-Al2O3(001) substrates was studied in planar devices with two terminal electrodes. We demonstrated multistep resistance switching in a device with dimensions of 5/1500 µm (electrode gap/electrode length), while only a single-step resistance switching was observed in a device with dimensions of 10/10 µm. Each step in the multistep resistance switching occurred within 100 ns and exhibited a time-independent constant value. Optical microscope observations of a filamentary current path in a VO2 layer imply that initial filamentary current path formation and its development are responsible for the multistep resistance switching. Temperature-controlled X-ray diffraction (XRD) measurements suggested the coexistence of regions with a variety of transition temperatures, which is considered to be closely related to the appearance of the multistep resistance switching. The multistep resistance switching in the VO2-based planar device is promising not only for functional electronic device applications but also as a fundamental research for switching mechanism in oxide materials.