Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
复制标题
DOI：
10.1116/6.0002115
复制
发表时间：
2022-12-01
影响因子：
2.9
通讯作者：
Pearton, Stephen J.
中科院分区：
文献类型：
--
作者：
Modak, Sushrut;Lundh, James Spencer;Pearton, Stephen J.
卤化物气相外延（HVPE）Ga 2 O3薄膜生长在c-平面蓝宝石和金刚石衬底上的温度高达550摄氏度，而不使用阻挡电介质层来保护金刚石表面。在蓝宝石衬底上生长刚玉相α-Ga 2 O3，而在金刚石上生长导致纳米晶β-Ga 2 O3（nc-beta-Ga 2 O3）的区域，当氧仅在膜生长期间存在于HVPE反应器中时。X射线衍射证实了在蓝宝石上生长的α-Ga 2 O 3，但未能检测到来自在金刚石上生长的膜的任何β-Ga 2 O 3反射。通过拉曼光谱进一步表征这些膜，其揭示了这些膜的β-Ga 2 O 3相。透射电子显微镜表明，这些薄膜的纳米晶特性。从阴极发光光谱，对于α-Ga 2 O 3/蓝宝石和nc-Ga 2 O 3/金刚石，观察到三个发射带，UVL '，UVL和BL，并且这些带的中心约为3.7，3.2和2.7 eV。在AVS的独家许可下发布。
Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 degrees C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase alpha-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline beta-Ga2O3 (nc-beta-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of alpha-Ga2O3 on sapphire but failed to detect any beta-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the beta-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL', UVL, and BL, were observed for both the alpha-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV. Published under an exclusive license by the AVS.