A scalable model for temperature dependent thermal resistance of SiGe HBTs
A scalable model for temperature dependent thermal resistance of SiGe HBTs
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DOI：
10.1109/bctm.2013.6798137
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发表时间：
2013-09
期刊：
影响因子：
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通讯作者：
A. Sahoo;S. Frégonèse;M. Weiss;C. Maneux;T. Zimmer
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文献类型：
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作者：
A. Sahoo;S. Frégonèse;M. Weiss;C. Maneux;T. Zimmer
本文提出了一种几何可扩展方法，用于计算沟槽隔离 SiGe 异质结双极晶体管 (HBT) 中的温度相关热阻 (RTH)。该模型能够预测任何温度和功耗 (Pdiss) 下的 RTH。通过根据温度梯度将热流区域离散为 n 个基本切片来获得温度依赖性。每个切片的 RTH 是使用与温度相关的热导率计算的。将结果与各种环境温度 (Tamb)、Pdiss 和器件尺寸的 3D 热 TCAD 模拟进行比较。最后，通过测量几种晶体管几何形状以及两种不同的技术来验证可扩展性，并发现两者非常一致。
This paper presents a geometry scalable approach for temperature dependent thermal resistance (RTH) calculations in trench-isolated SiGe heterojunction bipolar transistors (HBTs). The model is able to predict the RTH at any temperature and power dissipation (Pdiss). The temperature dependency is obtained by discretizing the heat flow region into n-number of elementary slices depending on the temperature gradient. RTHs of each slice are calculated using temperature dependent thermal conductivity. The results are compared to 3D thermal TCAD simulations for a wide range of ambient temperature (Tamb), Pdiss and device dimensions. Finally, the scalability is validated through measurements of several transistor geometries as well as two different technologies and found to be in good agreement.