(Invited) Hybrid- Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---
(Invited) Hybrid- Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---
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（特邀）SiGe混合触发快速熔融生长在Si平台上混合形成Ge绝缘体结构——人造晶体之路——
DOI：
10.1149/05005.0059ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and T. Sadoh
中科院分区：
文献类型：
--
作者：
M. Miyao;M. Kurosawa;K. Toko;Y. Tojo;and T. Sadoh
为了实现先进的三维大规模集成电路和高性能薄膜晶体管，需要在绝缘薄膜（GOI）上建立单晶锗层。我们开发了从Si衬底上播种的快速熔化Ge生长，实现了具有（100），（110）和（111）取向的芯片尺寸（~ cm长度）GOI结构。在绝缘膜上开始横向生长的驱动力是由熔化引起的硅锗混合引起的凝固温度梯度。结合人工硅微种子技术和快速熔融生长，可以在（100）Si平台上形成混合取向的GOI阵列，即（100）、（110）和（111）条纹。在混合定向GOI中也证明了高的空穴迁移率（~ 1000 cm 2/Vs）。
Single-crystal Ge layers on insulating films (GOI) are desired to achieve advanced 3-dimensional large-scale integrated circuits and high-performance thin-film transistors. We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves chip-size (~ cm length) GOI structures with (100),(110), and (111) orientations. Driving force to initiate the lateral growth over insulating films is clarified as the solidification temperature gradient originating from melting-induced Si-Ge mixing. Combination with the artificial Si micro-seed techniques and the rapid melting growth enables the formation of hybrid-orientation GOI arrays, ie,(100),(110), and (111) stripes, on (100) Si platform. High hole mobility (~ 1000 cm 2/Vs) in hybrid-orientation GOI is also demonstrated.