A 280-GHz 10-dBm Signal Source Based on InP HBT Technology
A 280-GHz 10-dBm Signal Source Based on InP HBT Technology
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基于 InP HBT 技术的 280 GHz 10 dBm 信号源
DOI：
10.1109/lmwc.2016.2646928
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发表时间：
2017
影响因子：
3
通讯作者：
J. Rieh
中科院分区：
文献类型：
--
作者：
J. Yun;Jungsoo Kim;J. Rieh
这项工作基于 250 nm InP 异质结双极晶体管 (HBT) 技术开发了 280 GHz 高功率信号源。所制造的信号源由两个同相锁定共基极交叉耦合振荡器组成，其输出由一对老鼠赛耦合器和威尔金森功率组合器在片上组合，以增强输出功率。所开发的信号源的振荡频率为 276.4 GHz，相位噪声在 1 MHz 偏移时为 –89 dBc/Hz。测得信号源的输出功率为 10 dBm (10 mW)，同时消耗的直流功率为 196 mW（直流至射频效率为 5.1%）。
A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of–89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).