Pyroelectric Response of Submicron Free-Standing Poly(vinylidene fluoride/trifluoroethylene) Copolymer Thin Films
Pyroelectric Response of Submicron Free-Standing Poly(vinylidene fluoride/trifluoroethylene) Copolymer Thin Films
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DOI：
10.7567/apex.6.021601
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发表时间：
2013-02
影响因子：
2.3
通讯作者：
Yusuke Kuroda;Y. Koshiba;M. Misaki;K. Ishida;Y. Ueda
中科院分区：
文献类型：
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作者：
Yusuke Kuroda;Y. Koshiba;M. Misaki;K. Ishida;Y. Ueda
制备了亚微米厚的聚偏氟乙烯/三氟乙烯共聚物（P（VDF/TrFE））铁电自支撑膜，并对其在无铅热释电红外传感器中的应用进行了表征。由于薄膜的自支撑结构降低了热容量并抑制了传感器元件中的热扩散，提高了热释电电流及其响应度。500 nm厚的自支撑膜的热释电电流比常规“衬底上”P（VDF/TrFE）膜元件的热释电电流高约20倍，并且500 nm厚的自支撑膜的热时间常数比常规“衬底上”P（VDF/TrFE）膜元件的热时间常数缩短1/6。
Submicron-thick free-standing films of ferroelectric poly(vinylidene fluoride/trifluoroethylene) copolymer, P(VDF/TrFE), were fabricated and characterized for application in lead-free pyroelectric infrared sensors. The pyroelectric current and its responsivity were improved by the free-standing structure of the films owing to the reduced thermal capacity and suppression of thermal diffusion in the sensor element. The pyroelectric current for the 500-nm-thick free-standing film was about 20 times higher than that for a conventional “on-substrate” P(VDF/TrFE) film element, and the thermal time constant for the 500-nm-thick free-standing film was shortened by 1/6 of that for a conventional “on-substrate” P(VDF/TrFE) film element.