Electrical and Optical Properties of In-Doped SnS Thin Films Prepared by Thermal Evaporation
Electrical and Optical Properties of In-Doped SnS Thin Films Prepared by Thermal Evaporation
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热蒸发法制备In掺杂SnS薄膜的电学和光学性能
DOI：
10.1149/1.3694463
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Haifang Zhou
中科院分区：
文献类型：
--
作者：
Weihui Huang;Shuying Cheng;Haifang Zhou
通过热蒸发将一硫化锡（SnS）和铟薄膜相继沉积在玻璃基板上（其中铟比例为0 at.%至12.49 at.%）。然后将薄膜在300℃真空中退火2h，得到不同In掺杂浓度的SnS(SnS：In)薄膜。使用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、霍尔效应测量系统和 UV/VIS/NIR 光谱仪对薄膜中 SnS 的结构、电学和光学特性进行了表征。结果表明，薄膜为正交结构的多晶SnS，薄膜中的晶粒仅沿(111)方向取向。所有薄膜均具有p型导电性。随着铟含量从0 at%增加到12.49 at%，薄膜的光学带隙从1.37 eV减小到1.12 eV，薄膜的载流子浓度明显增加，而薄膜的电阻率和载流子迁移率则直线下降。一定量的In掺杂可以改善薄膜的半导体性能，并且可以生产合适的SnS：在薄膜中作为薄膜太阳能电池的吸收剂。
Tin monosulfide (SnS) and indium thin films were successively deposited onto glass substrates by thermal evaporation (with indium proportion of 0 at.% to 12.49 at.%). Then the films were annealed in vacuum at 300 for 2h in order to obtain different Indoped concentration SnS (SnS: In) films. The structural, electrical and optical properties of the SnS: In thin films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), Hall Effect Measurement System and UV/VIS/NIR Spectrometer. The result shows that the films are polycrystalline SnS with orthogonal structure, and the crystallites in the films are exclusively oriented along (111) direction. All the films are of ptype conductivity. With the indium proportion increased from 0 at% to 12.49 at%, the optical bandgaps of the films are decreased from 1.37 eV to 1.12 eV, and the carrier concentration of the films is increased observably, whereas their resistivity and carrier mobility are decreased straightly. In-doping with a certain quantity can improve the semiconducting properties of the films and it is possible to produce suitable SnS: In thin films as absorbers in thin film solar cells.