Hydrogen passivation effect in nitrogen-doped ZnO thin films
Hydrogen passivation effect in nitrogen-doped ZnO thin films
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DOI：
10.1063/1.1886256
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发表时间：
2005-03
影响因子：
4
通讯作者：
Xiaonan Li;B. Keyes;S. Asher;S. Zhang;S. Wei;T. Coutts;S. Limpijumnong;C. Walle
中科院分区：
文献类型：
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作者：
Xiaonan Li;B. Keyes;S. Asher;S. Zhang;S. Wei;T. Coutts;S. Limpijumnong;C. Walle
通过傅里叶变换红外吸收光谱（FTIR）和第一性原理计算研究了氢在氮掺杂ZnO薄膜中的作用，以了解氮掺杂ZnO p型薄膜的困难。采用低压金属有机物化学气相沉积（MOCVD）方法制备了氮掺杂ZnO薄膜。观察到高水平的氮掺入，但受体浓度仍然很低。理论分析表明，NO−和H+带电缺陷联合收割机很有可能结合形成中性缺陷复合物，从而补偿氮相关受体。计算得到的相关红外振动模式的振动频率值与实测光谱符合得很好。因此，我们认为，在MOCVD生长的ZnO薄膜中实现p型掺杂的困难是由于，至少部分地，无意中钝化氢。
The role of hydrogen in nitrogen-doped ZnO thin films was studied by Fourier transform infrared (FTIR) absorption and modeled by first-principles calculations to understand the difficulty of doping ZnO p-type with nitrogen. Nitrogen-doped ZnO films were fabricated by low-pressure metal-organic chemical vapor deposition (MOCVD). High levels of nitrogen incorporation were observed, but the acceptor concentrations remained low. Theoretical analysis suggests there is a high probability that NO− and H+ charged defects combine to form the neutral defect complexes, thereby compensating the nitrogen-related acceptors. Calculated values of the vibrational frequencies of the related infrared modes agree well with the measured spectra. Thus, we believe the difficulty of achieving p-type doping in MOCVD-grown ZnO films is due, at least partially, to inadvertent passivation by hydrogen.