Characterization of Deep Defects in Boron-Doped CVD Diamond Films Using Transient Photocapacitance Method
Characterization of Deep Defects in Boron-Doped CVD Diamond Films Using Transient Photocapacitance Method
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使用瞬态光电容法表征掺硼 CVD 金刚石薄膜的深层缺陷
DOI：
10.1016/j.mssp.2016.12.001
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发表时间：
2017
影响因子：
4.1
通讯作者：
T. Kodama and T. Ito
中科院分区：
文献类型：
--
作者：
O. Maida;T. Hori;T. Kodama and T. Ito
我们开发了一种高灵敏度的瞬态光电容测量（TPM）系统，用于测量宽禁带材料中的深度缺陷，并将其应用于用高功率密度微波等离子体化学气相沉积方法在高压/高温合成的Ib金刚石衬底上生长的掺硼金刚石薄膜。发达TPM系统具有较低的检出限的变化小于0.5 fF的光电容测量和低温度漂移小于0.03 K在12 h。利用TPM系统,我们已经成功地发现了一个缺陷受滞约1.2 eV上面的价带最大B-doped金刚石薄膜质量相当高的水晶有强烈的激子发射峰的阴极发光光谱在≈80 K。所观察到的缺陷的光电离截面和缺陷密度分别为3.1×10-15cm2and 2.8×1016cm−3。
We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed TPM system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03 K in 12 h. By using the TPM system, we have successfully found an acceptor-type defect around 1.2 eV above the valence-band maximum for the B-doped diamond film with a considerably high crystalline quality that had some strong exciton emission peaks in the cathodoluminescence spectra taken at ≈80 K. The photoionization cross section and the defect density estimated for the observed defect were 3.1×10–15cm2and 2.8×1016cm−3, respectively.