Development of radiation hard planar silicon tracking detectors for the ATLAS Experiment at the HL-LHC
Development of radiation hard planar silicon tracking detectors for the ATLAS Experiment at the HL-LHC
复制标题
为 HL-LHC 的 ATLAS 实验开发辐射硬平面硅跟踪探测器
DOI：
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发表时间：
2014
期刊：
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通讯作者：
D. Forshaw
中科院分区：
文献类型：
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作者：
D. Forshaw
为了扩展LHC的物理范围，计划对加速器进行升级，这将使综合年光度增加10倍（达到250 - 300 fb$^{-1}$/年）。这将增加内部跟踪器的占用和辐射损伤。为了科普上升的占有率，ATLAS实验计划引入一个全硅内部跟踪器，用于高亮度LHC（HL-LHC）操作。对于硅，可以通过使用像素/微带的适当间距来调整占用率。由于高辐射损伤的限制意味着仅考虑具有设计用于读出电子信号（n-in-p和n-in-n）的电极配置的传感器。
本论文中提出的工作已经进行了CERN RD 50和ATLAS升级合作的一部分。主要的重点是，首先，在辐射硬硅探测器的发展和可能的开发中观察到的电荷倍增效应的照射硅探测器，通过电子收集电荷。其次，生产和优化专门为ATLAS新内部跟踪器设计的n-in-p平面像素探测器
（ITk）。原型传感器由Micron Semiconductors Ltd，UK生产。
To extend the physics reach of the LHC, upgrades to the accelerator are planned which will increase the integrated annual luminosity by a factor of 10 (to 250 - 300 fb$^{-1}$/ year). This will increase the occupancy and the radiation damage of the inner trackers. To cope with the elevated occupancy, the ATLAS experiment plans to introduce an all silicon inner tracker for use during High Luminosity LHC (HL-LHC) operation. With silicon, the occupancy can be adjusted by using the appropriate pitch for the pixels/micro-strips. Constraints due to high radiation damage mean that only sensors with electrode configuration designed to read out the electron signal (n-in-p and n-in-n) are considered.
The work presented within this thesis has been undertaken as part of the CERN-RD50 and ATLAS Upgrade collaborations. The main focus has been, firstly, on the development of radiation hard silicon detectors and the possible exploitation of the charge multiplication effect observed in irradiated silicon detectors that collect charge via electrons. Secondly, the production and optimisation of n-in-p planar pixel detectors designed specifically for ATLASs new Inner Tracker
(ITk). The prototype sensors were produced by Micron Semiconductors Ltd, UK.