Phenylphosphonic acid functionalization of indium tin oxide: Surface chemistry and work functions
Phenylphosphonic acid functionalization of indium tin oxide: Surface chemistry and work functions
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DOI：
10.1021/la052379e
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发表时间：
2006-07-04
期刊：
影响因子：
3.9
通讯作者：
Pehrsson, Pehr E.
中科院分区：
文献类型：
--
作者：
Koh, Sharon E.;McDonald, Krystal D.;Pehrsson, Pehr E.
用膦酸分子膜修饰氧化铟锡（ITO）衬底的功函数。ITO表面在官能化之前用碱清洁程序处理。通过接触角测定法和XPS定量膜的生长和覆盖。膜取向通过反射/吸收红外光谱法使用ITO-on-Cr基板来确定。绝对功函数的硝基苯基-和氰基苯基-膦酸薄膜在ITO的开尔文探针测量确定为5.60和5.77 eV，分别。
The work function of indium tin oxide (ITO) substrates was modified with phosphonic acid molecular films. The ITO surfaces were treated prior to functionalization with a base cleaning procedure. The film growth and coverage were quantified by contact angle goniometry and XPS. Film orientation was determined by reflection/absorption infrared spectroscopy using ITO-on-Cr substrates. The absolute work functions of nitrophenyl- and cyanophenyl-phosphonic acid films in ITO were determined by Kelvin probe measurement to be 5.60 and 5.77 eV, respectively.