Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (>10%) GeSn on insulator enhanced by weak laser irradiation
Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (>10%) GeSn on insulator enhanced by weak laser irradiation
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低温%20(<200%20oC)%20固相%20结晶%20of%20高%20替代%20Sn%20浓度%20(>10%)%20GeSn%20on%20绝缘体%20增强%20by%20弱%20激光%20辐照
DOI：
10.1063/1.4993220
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发表时间：
2017
期刊：
影响因子：
1.6
通讯作者：
Sadoh Taizoh
中科院分区：
文献类型：
--
作者：
Moto Kenta;Sugino Takayuki;Matsumura Ryo;Ikenoue Hiroshi;Miyao Masanobu;Sadoh Taizoh
