Tunable quantum dots in bilayer graphene
Tunable quantum dots in bilayer graphene
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DOI：
10.1021/nl062967s
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发表时间：
2007-04-01
期刊：
影响因子：
10.8
通讯作者：
Peeters, F. M.
中科院分区：
文献类型：
--
作者：
Pereira, J. Milton, Jr.;Vasilopoulos, P.;Peeters, F. M.
我们从理论上证明了双层石墨烯中的量子点是可以实现的。位置依赖掺杂打破了上下两层的等效性，提高了点正负动量态的简并性。数值结果表明，某些掺杂谱同时存在电子和空穴约束态，量子点谱具有显著的角动量依赖性，这与传统半导体量子点谱形成鲜明对比。我们预测光谱将由一系列非等距峰组成。
We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum states of the dot. Numerical results show the simultaneous presence of electron and hole confined states for certain doping profiles and a remarkable angular momentum dependence of the quantum dot spectrum, which is in sharp contrast with that for conventional semiconductor quantum dots. We predict that the optical spectrum will consist of a series of nonequidistant peaks.