Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors
Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors
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DOI：
10.1109/smic.2001.942350
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发表时间：
2001-09
期刊：
影响因子：
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通讯作者：
J. Rieh;D. Greenberg;Basanth Jagannathan;G. Freeman;S. Subbanna
中科院分区：
文献类型：
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作者：
J. Rieh;D. Greenberg;Basanth Jagannathan;G. Freeman;S. Subbanna
测量了不同发射极宽度和长度的高速SiGe HBT的热阻。较小的器件表现出较高的热阻值，但最终导致较低的结温上升，对于给定的功率密度。已开发的物理模型，显示出良好的协议与测量。该模型表明，热阻强烈依赖于深沟槽的几何形状。根据该模型，由于散热干扰，热阻也预计会随着相邻设备的存在而增加。
Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.