Red-emitting InxGa1−xN/InyGa1−yN quantum wells grown on lattice-matched InyGa1−yN/ScAlMgO4(0001) templates
Red-emitting InxGa1−xN/InyGa1−yN quantum wells grown on lattice-matched InyGa1−yN/ScAlMgO4(0001) templates
复制标题
在晶格匹配的 InyGa1−yN/ScAlMgO4(0001) 模板上生长的红光发射 InxGa1−xN/InyGa1−yN 量子阱
DOI：
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发表时间：
2018
影响因子：
2.3
通讯作者：
Y. Kawakami
中科院分区：
文献类型：
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作者：
T. Ozaki;M. Funato;Y. Kawakami
Red-emitting InxGa1−xN/InyGa1−yN quantum wells (x > 0.2, y ∼ 0.17) are grown on ScAlMgO4(0001) substrates with lattice-matched InyGa1−yN templates. The ratio of the photoluminescence (PL) intensity at room temperature against that at 11 K is 0.14 for a red-emitting InxGa1−xN/InyGa1−yN QW on a ScAlMgO4 substrate, whereas that for a conventional InxGa1−xN/GaN QW on a sapphire(0001) substrate is 0.004. The lattice-matched InyGa1−yN/ScAlMgO4 template generates a remarkable improvement in internal quantum efficiency. Additionally, the spatial uniformity of PL is also drastically improved, showing promise as long wavelength emitters.
