High-Resolution Thermoreflectance Imaging of GaN Power Microwave Transistors
High-Resolution Thermoreflectance Imaging of GaN Power Microwave Transistors
复制标题
GaN 功率微波晶体管的高分辨率热反射成像
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
P. Aaen
中科院分区：
文献类型：
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作者：
C. Matei;P. Aaen
本文介绍了基于CCD的热反射测量表面温度的亚微米的空间分辨率和50纳秒的时间分辨率。给出了10指GaN晶体管的测量结果和方法。阐述了热反射技术的原理，给出了20倍放大率的漏极和源极金属稳态温度测量结果以及60倍放大率的栅极金属和GaN沟道区瞬态温度测量结果。漏极金属上的稳态峰值温度为106.5 ℃，源极金属上的稳态峰值温度为89.6 ℃。在电脉冲的第一个0.2 μs持续时间内测量到89.8 ℃的温度变化。在19.7 μs的漏极电脉冲持续时间后，记录到121.4 ℃的峰值GaN沟道温度变化。关键词-热反射，热测量。
This paper presents CCD based thermoreflectance measurements of surface temperatures with submicron spatial resolution and 50 ns temporal resolution. The measurement results and methodology for 10-finger GaN transistor are presented. The principles of the thermoreflectance technique are explained, 20x magnification steady-state temperature measurements of the drain and source metals and 60x magnification transient temperature measurements of the gate metal and the GaN channel region are presented. Steady-state peak temperatures of 106.5◦C on the drain metal and 89.6◦C on the source metals are observed. A temperature change of 89.8◦C within the first 0.2 μs duration of the electrical pulse is measured. A peak GaN channel temperature change of 121.4◦C is recorded after 19.7 μs duration of the drain electrical pulse. Keywords—Thermoreflectance, thermal measurements.