High-performance n-type organic field-effect transistors with ionic liquid gates
High-performance n-type organic field-effect transistors with ionic liquid gates
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DOI：
10.1063/1.3493190
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发表时间：
2010-10
影响因子：
4
通讯作者：
S. Ono;N. Minder;Z. Chen;A. Facchetti;A. Morpurgo
中科院分区：
文献类型：
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作者：
S. Ono;N. Minder;Z. Chen;A. Facchetti;A. Morpurgo
采用离子液体栅极和N,N”-双(正烷基)-(1,7和1,6)-二氰基苝-3,4:9,10-双(二甲酰亚胺)单晶开发了高性能n型有机场效应晶体管。传输测量表明，这些器件在环境大气中可重复运行，栅极阈值电压可忽略不计，迁移率值高达 5.0 cm2/V s。这些迁移率值基本上与在没有离子液体、使用真空或空气作为栅极电介质的相同装置中测量的迁移率值相同。我们的结果表明，离子液体和n型有机半导体界面适合实现在小栅极电压下工作的高质量n型有机晶体管，而不牺牲电子迁移率。
High-performance n-type organic field-effect transistors were developed with ionic-liquid gates and N,N″-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm2/V s. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and n-type organic semiconductor interfaces are suitable to realize high-quality n-type organic transistors operating at small gate voltage, without sacrificing electron mobility.