Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification
Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification
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DOI：
10.1016/j.jcrysgro.2004.02.077
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发表时间：
2004-05
影响因子：
1.8
通讯作者：
Lijun Liu;K. Kakimoto;T. Taishi;K. Hoshikawa
中科院分区：
文献类型：
--
作者：
Lijun Liu;K. Kakimoto;T. Taishi;K. Hoshikawa
