High Capacitance, Photo-Patternable Ion Gel Gate Insulators Compatible with Vapor Deposition of Metal Gate Electrodes
High Capacitance, Photo-Patternable Ion Gel Gate Insulators Compatible with Vapor Deposition of Metal Gate Electrodes
复制标题
DOI：
10.1021/am505298q
复制
发表时间：
2014-11-12
影响因子：
9.5
通讯作者：
Lodge, Timothy P.
中科院分区：
文献类型：
--
作者：
Choi, Jae-Hong;Gu, Yuanyan;Lodge, Timothy P.
提出了一种利用光引发的可交联ABA三嵌段共聚物离子凝胶在电解液门控晶体管(EGTS)中制备高电容电解质薄膜的简便方法。在离子液体1-乙基-3-甲基咪唑双(三氟甲基磺酰)亚胺([EMI]-[TFSI])中，聚[(苯乙烯-r-乙烯基苯甲酰肼)-b-环氧乙烷-b-(苯乙烯-r-乙烯基苯甲酰亚胺)](SOS-N-3)三嵌段共聚物在紫外光照射下(波长=254 nm)的自组装过程中，聚苯乙烯-r-乙烯基苄肼(PS-N-3)端基可以化学交联。交流阻抗谱和小角X射线散射分析表明，紫外光交联对离子凝胶的离子输运和微观结构没有影响。利用光诱导交联策略，通过图案化掩模实现了离子凝胶的光致敏。利用光敏离子凝胶作为薄膜晶体管(TFT)的高电容栅绝缘体，薄膜晶体管阵列具有均匀和高的器件性能。具体地说，p型(聚3-己基噻吩基)(P3HT)和n型(氧化锌)晶体管在2V以下的电源电压下都表现出高的载流子迁移率(空穴迁移率接近1.4 cm(2)/(V S))和电子迁移率接近0.7 cm(2)/(V S)和通断电流比(类似于10(5))。本研究表明，光调制是一种在印刷电子制造中方便地将高电容离子凝胶引入TFT的很有前途的候选方法。
A facile fabrication route to pattern high-capacitance electrolyte thin films in electrolyte-gated transistors (EGTs) was demonstrated using a photoinitiated cross-linkable ABA-triblock copolymer ion gel. The azide groups of poly(styrene-r-vinylbenzylazide) (PS-N-3) end-blocks can be chemically cross-linked via UV irradiation (lambda = 254 nm) in the self-assembly of poly[(styrene-r-vinylbenzylazide)-b-ethylene oxide-b-(styrene-r-vinylbenzylazide)] (SOS-N-3) triblock copolymer in the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI]-[TFSI]). Impedance spectroscopy and small-angle X-ray scattering revealed that ion transport and microstructure of the ion gel are not affected by UV cross-linking. Using a photoinduced cross-linking strategy, photopatterning of ion gels through a patterned mask was achieved. Employing a photopatterned ion gel as the high-capacitance gate insulator in thin film transistors (TFTs), arrays of TFTs exhibited uniform and high device performance. Specifically, both p-type (poly(3-hexylthiophene)) (P3HT) and n-type (ZnO) transistors displayed high carrier mobility (hole mobility of similar to 1.4 cm(2)/ (V s) and electron mobility of similar to 0.7 cm(2)/ (V s) and ON/OFF current ratio (similar to 10(5)) at supply voltages below 2 V. This study suggests that photopatterning is a promising candidate to conveniently incorporate high-capacitance ion gels into TFTs in the fabrication of printed electronics.