Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions
Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions
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DOI：
10.1557/s43579-021-00117-w
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发表时间：
2021-11
影响因子：
1.9
通讯作者：
Basant Chitara;Kunyan Zhang;Martha Y. Garcia Cervantes;T. B. Limbu;Bikram Adhikari-;Shengxi Huang;Fei Yan-Fe
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文献类型：
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作者：
Basant Chitara;Kunyan Zhang;Martha Y. Garcia Cervantes;T. B. Limbu;Bikram Adhikari-;Shengxi Huang;Fei Yan-Fe
2D异质结为在高性能光伏器件中利用更广泛的太阳能光谱提供了新的机会。在这里，我们探索了一种第二类p-n异质结，通过利用空气稳定的碲(Te)和MoS_2相结合，来研究它在光伏应用中的电荷转移。光致发光光谱、拉曼光谱和开尔文探针力显微镜证实了MoS_2/Te异质结的电荷转移。MoS_2/Te异质结的激子结合能约为10 meV，远低于单层MoS_2的激子结合能。这一战略可以被用来开发下一代本质上超薄的光收集设备。
2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices.