Influence of N2/H2 Plasma Irradiation to GaN Substrate for Improving the Interface of the Homoepitaxial GaN Grown by Radical Enhanced MOCVD (REMOCVD)
Influence of N2/H2 Plasma Irradiation to GaN Substrate for Improving the Interface of the Homoepitaxial GaN Grown by Radical Enhanced MOCVD (REMOCVD)
复制标题
N2/H2 等离子体辐照对 GaN 衬底对改善自由基增强 MOCVD (REMOCVD) 生长同质外延 GaN 界面的影响
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
and Masaru Hori
中科院分区：
文献类型：
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作者：
Amalraj Frank Wilson;Dhasiyan Arun Kumar;Naohiro Shimizu;Osamu Oda;Nobuyuki Ikarashi;Hiroki Kondo;Kenji Ishikawa;and Masaru Hori
