Toward understanding weak matrix effects in TOF SIMS

Toward understanding weak matrix effects in TOF SIMS
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DOI:
10.1116/1.5019682
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发表时间:
2018-05-01
影响因子:
1.4
通讯作者:
Walker, Amy V.
Walker, Amy V.
中科院分区:
工程技术4区
文献类型:
--
作者:
Gelb, Lev D.;Walker, Amy V.

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化学成像方法,包括成像质谱法,越来越多地用于分析从生物组织到电子设备的样品。更广泛地采用成像质谱的障碍是存在使定量分析复杂化的基质效应。分析物分子与其周围环境(“基质”)之间的相互作用可以基本上改变所观察到的离子的产率和类型。此外,这种“固有”效应可能与探测器饱和和其他仪器相关并发症引起的非线性响应混淆。因此,定量分析飞行时间二次离子质谱(TOF西姆斯)的数据,试图占基质效应是罕见的。作者讨论了这样的数据分析,使用最大后验重建的基础上,物理动机的模型,并提出了进展的定量提取化学浓度分布和组分光谱中存在的基质效应,使用混合自组装的烷硫醇单分子膜作为测试系统。作者证明,采用系列扩展方法将基质效应纳入最低阶是一种有效的策略,这样做可以提高测量表面组成的定量性能,并且还可以在西姆斯过程中获得有关物种之间相互作用的信息。由AVS出版。
Chemical imaging methods, including imaging mass spectrometry, are increasingly used for the analysis of samples ranging from biological tissues to electronic devices. A barrier to wider adoption of imaging mass spectrometry is the presence of matrix effects which complicate quantitative analysis. Interactions between an analyte molecule and its surroundings (the "matrix") can substantially alter both the yield and type of ions observed. Furthermore, such "intrinsic" effects can be confused with nonlinear response due to detector saturation and other instrument-related complications. As a result, quantitative analyses of time-of-flight secondary ion mass spectrometry (TOF SIMS) data that attempt to account for matrix effects are rare. The authors discuss analysis of such data using maximum a posteriori reconstruction based on physically motivated models, and present progress toward the quantitative extraction of chemical concentration profiles and component spectra in the presence of matrix effects, using mixed self-assembled alkanethiolate monolayers as a test system. The authors demonstrate that the incorporation of matrix effects to lowest order using a series-expansion approach is an effective strategy and that doing so provides improved quantitative performance in measuring surface compositions and can also yield information about interactions between species during the SIMS process. Published by the AVS.