A 750 Mb/s, 12 pJ/b, 6-to-10 GHz CMOS IR-UWB Transmitter With Embedded On-Chip Antenna
A 750 Mb/s, 12 pJ/b, 6-to-10 GHz CMOS IR-UWB Transmitter With Embedded On-Chip Antenna
复制标题
DOI：
10.1109/jssc.2008.2011034
复制
发表时间：
2009-01
影响因子：
5.4
通讯作者：
V. Kulkarni;M. Muqsith;K. Niitsu;H. Ishikuro;T. Kuroda
中科院分区：
文献类型：
--
作者：
V. Kulkarni;M. Muqsith;K. Niitsu;H. Ishikuro;T. Kuroda
提出了一种基于脉冲无线电的新型超宽带发射机。发射机采用0.18 μ m CMOS工艺设计，实现了极低的复杂度和低功耗。它利用6- 10ghz频段产生中心频率为8ghz的短持续时间双相调制超宽带脉冲。由于脉冲产生电路本身具有脉冲整形功能，因此不需要额外的射频滤波电路。产生的脉冲符合FCC光谱发射掩模。测量结果表明，发射机功耗为12 pJ/b，最大脉冲重复率为750 Mb/s。设计并研究了6- 10ghz频段的可选嵌入式片上天线和功率放大器，作为未来极短距离IR-UWB通信的低成本解决方案。
This paper presents a novel impulse radio based ultra-wideband transmitter. The transmitter is designed in 0.18 mum CMOS process realizing extremely low complexity and low power. It exploits the 6-to-10 GHz band to generate short duration bi-phase modulated UWB pulses with a center frequency of 8 GHz. No additional RF filtering circuits are required since the pulse generator circuit itself has the functionality of pulse shaping. Generated pulses comply with the FCC spectral emission mask. Measured results show that the transmitter consumes 12 pJ/b to achieve a maximum pulse repetition rate of 750 Mb/s. An optional embedded on-chip antenna and a power amplifier operating in 6-10 GHz band are also designed and investigated as a future low cost solution for very short distance IR-UWB communications.