Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy
Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy
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分子束外延生长过程中 Te 基 II-VI 化合物的氮掺杂
DOI：
10.1063/1.366838
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发表时间：
1998
影响因子：
3.2
通讯作者：
N. Magnea
中科院分区：
文献类型：
--
作者：
T. Baron;K. Saminadayar;N. Magnea
我们详细研究了在分子束外延过程中，利用直流辉光等离子体源产生的氮原子掺杂te基化合物（CdTe, ZnTe）和合金（CdMgTe， ZnMgTe和CdZnTe）的p型掺杂。表征包括电容电压、霍尔效应、低温反射率和发光、双晶x射线衍射（XRD）、核反应分析和二次离子质谱。掺杂引入了浅氢受体NTe，测定了其电离能。对于ZnTe，当层中加入≈1.5×1020 cm−3的氮原子时，可以得到p≈1020 cm−3的掺杂。随着Zn含量的降低，CdZnTe和ZnMgTe合金的掺杂水平显著降低。CdTe的最高浓度为p≈1018 cm−3。对于掺杂水平p≈1017 cm−3的CdTe层，在65 K时空穴迁移率为μp=235 cm2/V s。在ZnTe中，氮原子在NTe构型中的掺入引起了晶格参数的明显变化。
We present a detailed study of p-type doping of Te-based compounds (CdTe, ZnTe) and alloys (CdMgTe, ZnMgTe, and CdZnTe) during molecular beam epitaxy, using nitrogen atoms produced by a direct current glow plasma source. Characterization includes capacitance–voltage, Hall effect, low temperature reflectivity and luminescence, double crystal x-ray diffraction (XRD), nuclear reaction analysis and secondary ion mass spectroscopy. Doping introduces shallow hydrogenic acceptors NTe, whose ionization energy was determined. For ZnTe, doping as high as p≈1020 cm−3 can be obtained when ≈1.5×1020 cm−3 nitrogen atoms are incorporated in the layer. This doping level decreases considerably for CdZnTe and ZnMgTe alloys as the Zn content decreases. The highest concentration obtained for CdTe is p≈1018 cm−3. For a CdTe layer with a doping level p≈1017 cm−3 the hole mobility is μp=235 cm2/V s at 65 K. In ZnTe, incorporation of nitrogen atoms in NTe configurations induces a noticeable change of the lattice parameter, a cha...