Programmable polymer thin film and non-volatile memory device
Programmable polymer thin film and non-volatile memory device
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DOI：
10.1038/nmat1269
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发表时间：
2004-12-01
期刊：
影响因子：
41.2
通讯作者：
Yang, Y
中科院分区：
文献类型：
--
作者：
Ouyang, JY;Chu, CW;Yang, Y
在发光二极管和场效应晶体管等有机电子器件成功的基础上，目前正在探索制造非易失性有机存储器件的程序。在这里，我们展示了一种新型的溶液加工有机存储器件。在一个由含有金纳米粒子和8-羟基喹啉的聚苯乙烯薄膜夹在两个金属电极之间制成的装置中，观察到可编程的电双稳定性。制备的器件处于低电导率状态，在2.8 V的外偏置下突然转变为高电导率状态。这两种状态的电导率相差约4个数量级。施加1.8 V的负偏置使器件返回到低导电性状态。电子跃迁归因于金纳米粒子与8-羟基喹啉之间的电场诱导电荷转移。从低电导率状态到高电导率状态的转变发生在纳秒内，并且是非易失性的，这表明该器件可用于低成本，高密度的存储器存储。
Building on the success of organic electronic devices, such as light-emitting diodes and field-effect transistors, procedures for fabricating non-volatile organic memory devices are now being explored. Here, we demonstrate a novel organic memory device fabricated by solution processing. Programmable electrical bistability was observed in a device made from a polystyrene film containing gold nanoparticles and 8-hydroxyquinoline sandwiched between two metal electrodes. The as-prepared device, which is in a low-conductivity state, displays an abrupt transition to a high-conductivity state under an external bias of 2.8 V. These two states differ in conductivity by about four orders of magnitude. Applying a negative bias of 1.8 V causes the device to return to the low-conductivity state. The electronic transition is attributed to the electric-field-induced charge transfer between the gold nanoparticles and 8-hydroxyquinoline. The transition from the low- to the high-conductivity state takes place in nanoseconds, and is non-volatile, indicating that the device may be used for low-cost, high-density memory storage.