Artificial Graphene on Si Substrates: Fabrication and Transport Characteristics
Artificial Graphene on Si Substrates: Fabrication and Transport Characteristics
复制标题
硅衬底上的人造石墨烯：制造和传输特性
DOI：
10.1021/acsnano.1c04995
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发表时间：
2021
期刊：
影响因子：
17.1
通讯作者：
Zhong Zhenyang
中科院分区：
文献类型：
--
作者：
Chen Peizong;Zhang Ningning;Peng Kun;Zhang Lijian;Yan Jia;Jiang Zuimin;Zhong Zhenyang
基于半导体量子点（QD）蜂窝晶格的人工石墨烯（AG）由于载流子相互作用和蜂窝拓扑结构之间的可调相互作用而在半导体中无质量狄拉克费米子的探索和应用中引起了极大的兴趣。在这里，一个创新的战略，以实现在硅衬底上的AG开发的蜂窝晶格的Au纳米盘上的Si/GeSi量子阱。纳米级Au/Si肖特基结引起的横向电势调制导致形成以蜂窝晶格排列的量子点以形成AG。AG的非线性电流-电压曲线揭示了电导相变与开关电压，大的电滞回线，和一个强大的尖锐的电流峰伴随着一组微分电导峰和负微分电导附近的开关电压，这可以调制的温度和光。这些功能被解释的库仑阻塞效应，集体共振隧穿，和AG中的空穴耦合的基础上的模型。我们的研究结果不仅展示了形成的方法，而且将极大地刺激创新的基于磁阻的AG的表征和应用。
Artificial graphene (AG) based on a honeycomb lattice of semiconductor quantum dots (QDs) has been of great interest for exploration and applications of massless Dirac Fermions in semiconductors thanks to the tunable interplay between the carrier interactions and the honeycomb topology. Here, an innovative strategy to realize AG on Si substrates is developed by fabricating a honeycomb lattice of Au nanodisks on a Si/GeSi quantum well. The lateral potential modulation induced by the nanoscale Au/Si Schottky junction results in the formation of quantum dots arranged in a honeycomb lattice to form AG. Nonlinear current–voltage curves of the AG reveal conductance phase transitions with switch on/off voltages, a large electric hysteresis loop, and a strong sharp current peak accompanied by a group of differential-conductance peaks and negative differential conductance around the switch-on voltage, which can be modulated by temperature and light. These features are interpreted by a model based on the Coulomb blockade effect, the collective resonant tunneling, and the coupling of holes in the AG. Our results not only demonstrate an approach to the formation but also will greatly stimulate the characterizations and the applications of innovative semiconductor-based AG.