Power MOSFET Basics : Understanding Gate Charge and Using It To Assess Switching Performance
Power MOSFET Basics : Understanding Gate Charge and Using It To Assess Switching Performance
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功率 MOSFET 基础知识：了解栅极电荷并用它来评估开关性能
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
Jess Brown
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文献类型：
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作者：
Jess Brown
这是一系列应用笔记中的第二篇，这些应用笔记定义了MOSFET的基本行为，包括独立器件和开关模式电源（SMPS）中的开关器件。第一个应用笔记1提供了MOSFET的基本描述和器件背后的术语，包括定义和物理结构。本应用笔记更详细地介绍了MOSFET在实际应用电路中的开关行为，并试图使读者/设计人员能够使用最少的可用信息为应用选择正确的器件。本文介绍了几种评估MOSFET开关性能的方法，并将这些方法与实际结果进行了比较。文中使用的几个定义来自应用笔记AN 605。
This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone devices and as switching devices implemented in a switchmode power supply (SMPS). The first application note1 provided a basic description of the MOSFET and the terminology behind the device, including definitions and physical structure. This application note goes into more detail on the switching behavior of the MOSFET when used in a practical application circuit and attempts to enable the reader/designer to choose the right device for the application using the minimum available information from the datasheet. The note goes through several methods of assessing the switching performance of the MOSFET and compares these methods against practical results. Several definitions used within the text are drawn from application note AN605.