A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films
A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films
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DOI：
10.1063/1.1305549
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发表时间：
2000-07
影响因子：
3.2
通讯作者：
D. Meister;M. Böhm;M. Topf;W. Kriegseis;W. Burkhardt;I. Dirnstorfer;S. Rösel;Baker Farangis;B. Meyer;A. Hoffmann;H. Siegle;C. Thomsen;J. Christen;F. Bertram
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文献类型：
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作者：
D. Meister;M. Böhm;M. Topf;W. Kriegseis;W. Burkhardt;I. Dirnstorfer;S. Rösel;Baker Farangis;B. Meyer;A. Hoffmann;H. Siegle;C. Thomsen;J. Christen;F. Bertram
我们报告温度依赖的霍尔效应测量和二次离子质谱无意掺杂，n型导电GaN外延膜。在很宽的自由载流子浓度范围内，我们发现霍尔测量和原子氧浓度之间有很好的相关性。我们观察到增加的氧浓度接近膜和蓝宝石衬底之间的界面，这是典型的生长技术（从镓和氨合成）。它产生了一个厚度为1.5 μm的简并n型层，并在低温（<50 K）下产生了与温度无关的迁移率和霍尔浓度。在空间分辨的拉曼和阴极发光实验中也可以看到自由载流子浓度的梯度。根据霍尔效应的温度依赖性、傅里叶变换红外吸收实验和光致发光实验，我们得出结论：氧产生了一个浅施主能级，并具有一个束缚能级。
We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of ≈1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (<50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding en...