Fabrication of Cu2ZnSnS4 thin films by co-evaporation
Fabrication of Cu2ZnSnS4 thin films by co-evaporation
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DOI：
10.1002/pssc.200669631
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发表时间：
2006-09
期刊：
影响因子：
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通讯作者：
Tooru Tanaka;D. Kawasaki;M. Nishio;Q. Guo;H. Ogawa
中科院分区：
文献类型：
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作者：
Tooru Tanaka;D. Kawasaki;M. Nishio;Q. Guo;H. Ogawa
采用元素源共蒸发的方法在石英玻璃衬底上制备了Cu2ZnSnS4(CZTS)薄膜。沉积温度为400oC~600oC。电子探针显微分析结果表明，在所有衬底温度下均可获得接近化学计量比的CZTS薄膜。X-射线衍射谱表明，CZTS薄膜具有具有强烈择优取向的方锌矿结构。扫描电子显微镜观察发现，随着衬底温度的升高，薄膜的晶粒尺寸变大。CZTS薄膜具有p型导电性能。(2006 Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Cu2ZnSnS4 (CZTS) thin films were fabricated by co-evaporation of elemental sources on quartz glass substrates. The deposition was performed at the substrate temperature between 400 oC and 600 oC. From the results of electron probe microanalysis, it was confirmed that the nearly stoichiometric CZTS thin films were obtained in all substrate temperature. The X-ray diffraction patterns revealed that CZTS thin films have a kesterite structure with a strong preferred orientation. From the scanning electron microscope observation, the grain size becomes larger with increasing the substrate temperature. The CZTS thin films showed p -type conductivity. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)