Low RC-Constant Perforated-Channel HFET
Low RC-Constant Perforated-Channel HFET
复制标题
低 RC 恒定穿孔沟道 HFET
DOI：
--
复制
发表时间：
2014
影响因子：
4.9
通讯作者：
M. Shur
中科院分区：
文献类型：
--
作者：
G. Simin;Mirwazul Islam;M. Gaevski;Jianyu Deng;R. Gaska;M. Shur
由于源极-栅极和栅极-漏极区域中的电流扩展效应，在栅下使用穿孔沟道区的新型HFET设计降低了漏极和源极寄生电阻。对AlGaN/GaN HFET的验证结果表明，使用简单而坚固的穿孔沟道器件工艺，RONCG时间常数减少了约两倍。这些结果对新一代功率开关晶体管尤其重要。
The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using simple and robust perforated channel device processing. These results are especially important for new generations of power switching transistors.