Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor
Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor
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DOI：
10.1002/adfm.202009999
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发表时间：
2020-12-10
影响因子：
19
通讯作者：
Gu, Yi
中科院分区：
文献类型：
--
作者：
Gabel, Matthew;Gu, Yi
铁电记忆电阻器是一种有前途的新一代器件，在存储器、数字信息处理和神经形态计算方面具有广泛的应用。最近，范德华铁电In2Se3具有独特的面外和面内互连极化，实现了多向电阻开关，为平面和垂直器件集成提供了前所未有的灵活性。然而，这些装置的操作机制仍不清楚。本研究通过范德华in2se3基平面铁电忆阻器的演示，器件电阻连续可调超过3个数量级，并通过将器件电阻状态、铁电畴构型和表面电位相关联，揭示了电阻开关是由多畴形成和域间相关能垒控制的。与通常假设的金属-铁电界面上的肖特基势垒调制相反。这些发现通过阐明新一代器件的微观运行机制揭示了新的器件物理学，并为未来的器件开发和集成工作提供了重要指导。
Ferroelectric memristors represent a promising new generation of devices that have a wide range of applications in memory, digital information processing, and neuromorphic computing. Recently, van der Waals ferroelectric In2Se3 with unique interlinked out-of-plane and in-plane polarizations has enabled multidirectional resistance switching, providing unprecedented flexibility in planar and vertical device integrations. However, the operating mechanisms of these devices have remained unclear. Here, through the demonstration of van der Waals In2Se3-based planar ferroelectric memristors with the device resistance continuously tunable over three orders of magnitude, and by correlating device resistance states, ferroelectric domain configurations, and surface electric potential, the studies reveal that the resistive switching is controlled by the multidomain formations and the associated energy barriers between domains, as opposed to the commonly assumed Schottky barrier modulations at the metal-ferroelectric interface. The findings reveal new device physics through elucidating the microscopic operating mechanisms of this new generation of devices, and provide a critical guide for future device development and integration efforts.