Effect of holding time on SiC whiskers growth of SiCw/SiC composites based on SLS technology and their mechanical properties
Effect of holding time on SiC whiskers growth of SiCw/SiC composites based on SLS technology and their mechanical properties
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DOI：
10.1016/j.ceramint.2022.07.234
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发表时间：
2022
影响因子：
5.2
通讯作者：
Tao Zeng
中科院分区：
文献类型：
--
作者：
Decai Lu;Su Cheng;Liwei Zhang;Dequan Shi;Mingxing Fan;Tao Zeng
The in-situ SiC whisker and SiC particle composites were prepared by selective laser sintering (SLS) technology, .and the longitudinal and transverse growth rates of crystal nuclei at the liquid-solid interface were calculated and .analyzed under the traditional vapor-liquid-solid mechanism. A mathematical model of holding time on the .number of in-Situ SiC whisker growth was established, and the prediction rate was 95%. The mechanical .properties of in-situ SiC whisker and pure SiC samples with similar volume densities were calculated. The results .showed that: The longitudinal growth rate of crystal nuclei at the liquid-solid interface was higher than the .transverse growth rate. After precursor infiltration pyrolysis (PIP) four-cycle treatment, the fracture toughness .per unit volume density of B-1, B-2, and B-3 specimens increased by 198.66%, 225.00%, and 221.05%, .respectively, compared with pure SiC specimens, indicating that this method has a vital role in increasing the .toughness of SiC ceramics.
