Nanocrystal formation in hexagonal SiC after Ge+ ion implantation.
Nanocrystal formation in hexagonal SiC after Ge+ ion implantation.
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DOI：
10.1093/jmicro/50.3.251
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发表时间：
2001-05
期刊：
影响因子：
--
通讯作者：
Ute Kaiser
中科院分区：
文献类型：
--
作者：
Ute Kaiser
高分辨率和分析电子显微镜技术用于表征Ge注入六方SiC。在 1200 摄氏度下对注入的样品进行退火后，发现 Ge 优先位于间隙位置。在 1600 摄氏度退火后，形成应变立方和六方（或断层立方）Ge 和 Ge Si 的小纳米晶体。有时，也会观察到六方（或断层立方）硅纳米晶体。
High-resolution and analytical electron microscopy techniques are used to characterize Ge-implanted hexagonal SiC. After annealing the implanted samples at 1200 degrees C, Ge is found to be located preferentially on interstitial sites. After annealing at 1600 degrees C, small nanocrystals of strained cubic and hexagonal (or faulted cubic) Ge and Ge Si form. Occasionally, hexagonal (or faulted cubic) Si nanocrystals are observed also.